bfq 193 oct-12-1999 1 npn silicon rf transistor for low noise, high-gain amplifiers up to 2 ghz for linear broadband amplifiers f t = 7.5 ghz f = 1.3 db at 900 mhz 2 1 3 vps05162 2 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfq 193 rc 1 = b 2 = c 3 = e sot-89 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 80 ma base current i b 10 total power dissipation , t s 93 c 1) p tot 600 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance 95 k/w junction - soldering point r thjs 1 t s is measured on the collector lead at the soldering point to the pcb
bfq 193 oct-12-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. min. typ. dc characteristics v - - 12 v (br)ceo collector-emitter breakdown voltage i c = 1 ma, i b = 0 a collector-emitter cutoff current v ce = 20 v, v be = 0 - i ces 100 - na collector-base cutoff current v cb = 10 v, i e = 0 - i cbo - 100 a emitter-base cutoff current v eb = 1 v, i c = 0 i ebo 1 - - - dc current gain i c = 30 ma, v ce = 8 v h fe 50 100 200
bfq 193 oct-12-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. ac characteristics (verified by random sampling) f t 5.5 7.5 - transition frequency i c = 50 ma, v ce = 8 v, f = 500 mhz ghz c cb - 1.2 0.78 collector-base capacitance v cb = 10 v, f = 1 mhz pf c ce - - 0.36 collector-emitter capacitance v ce = 10 v, f = 1 mhz c eb - 2.1 emitter-base capacitance v eb = 0.5 v, f = 1 mhz - f - - 1.3 2.1 - - noise figure i c = 10 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz db 14 8 - - - - power gain, maximum available f) i c = 30 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz g ma | s 21e | 2 - - 11.5 6 transducer gain i c = 30 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz f = 1.8 ghz - - 1 g ma = | s 21 / s 12 | (k-(k 2 -1) 1/2 )
bfq 193 oct-12-1999 4 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 250 300 350 400 450 500 550 600 mw 700 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
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